bsz050n03ms g opti mos ?3 m-series power-mosfet features ? optimized for 5v driver application (notebook, vg a, pol) ? low fom sw for high frequency smps ? 100% avalanche tested ? n-channel ? very low on-resistance r ds(on) @ v gs =4.5 v ? excellent gate charge x r ds(on) product (fom) ? qualified according to jedec 1) for target applications ? superior thermal resistance ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d v gs =10 v, t c =25 c 40 a v gs =10 v, t c =100 c 40 v gs =4.5 v, t c =25 c 40 v gs =4.5 v, t c =100 c 40 v gs =4.5 v, t a =25 c, r thja =60 k/w 2) 15 pulsed drain current 3) i d,pulse t c =25 c 160 avalanche current, single pulse 4) i as t c =25 c 20 avalanche energy, single pulse e as i d =20 a, r gs =25 w 70 mj gate source voltage v gs 20 v value 1) j-std20 and jesd22 type package marking bsz050n03ms g pg-tsdson-8 050n03m pg-tsdson-8 v ds 30 v r ds(on),max v gs =10 v 4.5 m w v gs =4.5 v 5.7 i d 40 a product summary rev. 1.7 page 1 2009-11-05
bsz050n03ms g maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit power dissipation p tot t c =25 c 48 w t a =25 c, r thja =60 k/w 2) 2.1 operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2.5 k/w device on pcb r thja 6 cm 2 cooling area 2) - - 60 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 1 - 2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =16 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =20 a - 4.6 5.7 m w v gs =10 v, i d =20 a - 3.8 4.5 gate resistance r g 0.7 1.4 2.5 w transconductance g fs | v ds |>2| i d | r ds(on)max , i d =30 a 38 75 - s 3) see figure 3 for more detailed information value values 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 wit h 6 cm2 (one layer, 70 m thick) copper area for dr ain connection. pcb is vertical in still air. rev. 1.7 page 2 2009-11-05
bsz050n03ms g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2700 3600 pf output capacitance c oss - 800 1100 reverse transfer capacitance c rss - 55 - turn-on delay time t d(on) - 6.7 - ns rise time t r - 4.2 - turn-off delay time t d(off) - 26 - fall time t f - 3.2 - gate charge characteristics 5) gate to source charge q gs - 7.8 10 nc gate charge at threshold q g(th) - 4.2 5.6 gate to drain charge q gd - 3.8 6.2 switching charge q sw - 7.3 11 gate charge total q g - 17 22 gate plateau voltage v plateau - 2.9 - v gate charge total q g v dd =15 v, i d =30 a, v gs =0 to 10 v - 34 46 gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 4.5 v - 14 19 nc output charge q oss v dd =15 v, v gs =0 v - 21 28 reverse diode diode continuous forward current i s - - 40 a diode pulse current i s,pulse - - 160 diode forward voltage v sd v gs =0 v, i f =20 a, t j =25 c - 0.83 1.1 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 20 nc 5) see figure 16 for gate charge parameter definition 4) see figure 13 for more detailed information t c =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =30 a, r g =1.6 w v dd =15 v, i d =30 a, v gs =0 to 4.5 v rev. 1.7 page 3 2009-11-05
bsz050n03ms g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ) parameter: v gs 3 safe operating area 4 max. transient thermal imped ance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 0.01 0.1 1 10 0 0 0 0 0 0 1 t p [s] z thjc [k/w] 0 10 20 30 40 50 60 0 40 80 120 160 t c [c] p tot [w] 10 v 4.5 v 0 10 20 30 40 50 0 40 80 120 160 t c [c] i d [a] rev. 1.7 page 4 2009-11-05
bsz050n03ms g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward trans conductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 6 v 10 v 0 2 4 6 8 10 0 10 20 30 40 50 i d [a] r ds(on) [m w ww w ] 25 c 150 c 0 30 60 90 120 150 180 0 1 2 3 4 5 v gs [v] i d [a] 2.8 v 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 0 30 60 90 120 150 180 0 1 2 3 v ds [v] i d [a] 0 40 80 120 160 0 40 80 120 160 i d [a] g fs [s] rev. 1.7 page 5 2009-11-05
bsz050n03ms g 9 drain-source on-state resistance 10 typ. gate thre shold voltage r ds(on) =f( t j ); i d =20 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250 a 11 typ. capacitances 12 forward characteristics of r everse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 1 2 3 4 5 6 7 8 9 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m w ww w ] 0 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 10 100 1000 10000 0 10 20 30 v ds [v] c [pf] 25 c 150 c 25 c, 98% 150 c, 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [a] rev. 1.7 page 6 2009-11-05
bsz050n03ms g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 w v gs =f( q gate ); i d =30 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge wav eforms v br(dss) =f( t j ); i d =1 ma 20 22 24 26 28 30 32 34 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q g ate v g s(th) q g(th) q g s q g d q sw q g 25 c 100 c 125 c 1 10 100 1 10 100 1000 t av [s] i av [a] 6 v 15 v 24 v 0 2 4 6 8 10 12 0 10 20 30 40 q gate [nc] v gs [v] rev. 1.7 page 7 2009-11-05
bsz050n03ms g package outline pg-tsdson-8 rev. 1.7 page 8 2009-11-05
bsz050n03ms g published byinfineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee ofconditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for informationon the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.7 page 9 2009-11-05
|
